?2001 fairchild semiconductor corporation rev. a1, july 2001 KST2907A pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector power dissipation 350 mw t stg storage temperature 150 c symbol parameter test condition min. max. units bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -60 v bv ceo * collector-emitter breakdown voltage i c = -10ma, i b =0 -60 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cbo collector cut-off current v cb = -50v, i e =0 -0.01 a h fe dc current gain v ce = -10v, i c = -0.1ma v ce = -10v, i c = -1.0ma v ce = -10v, i c = -10ma *v ce = -10v, ic= -150ma *v ce = -10v, i c = -500ma 75 100 100 100 50 300 v ce (sat) * collector-emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -0.4 -1.6 v v v be (sat) * base-emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -1.3 -2.6 v v f t current gain bandwidth product i c = -50ma, v ce = -20v f=100mhz 200 mhz c ob output capacitance v cb = -10v, i e =0, f=1.0mhz 8 pf t on turn on time v cc = -30v, i c = -150ma i b1 = -15ma 50 ns t off turn off time v cc = -6v, i c = -150ma i b1 =i b2 = -15ma 110 ns 1. base 2. emitter 3. collector KST2907A general purpose transistor 2f marking sot-23 1 2 3
?2001 fairchild semiconductor corporation KST2907A rev. a1, july 2001 typical characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage base-emitter saturation voltage figure 3. output capacitance figure 4. current gain bandwidth product -1 -10 -100 -1000 10 100 1000 v ce = 10v h fe , dc current gain i c [a], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 v ce (sat) v be (sat) i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -1 -10 -100 0 2 4 6 8 10 12 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 -1000 10 100 1000 v ce = -20v f t [mhz], current gain bandwidth product i c [ma], collector current
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package demensions ?2001 fairchild semiconductor corporation rev. a1, july 2001 KST2907A dimensions in millimeters
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